1/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.11 - rev.c abbreviated symbol : 09 abbreviated symbol : 09 abbreviated symbol : 09 abbreviated symbol : 09 (1) base (2) emitter (3) collector rohm : vmt3 dtc115tm (1) emitter (2) base (3) collector rohm : emt3 DTC115TE (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.2 ( 2 ) ( 1 ) 1.6 0.7 0.15 0.1min. 0.55 0.2 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0.2 0.15 0.1min. 0.9 0.7 1.25 2.1 0.3 ( 3 ) 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 rohm : smt3 eiaj : sc-59 dtc115tka rohm : umt3 eiaj : sc-70 dtc115tua ( 2 ) ( 1 ) 2.8 1.6 0.4 ( 3 ) 2.9 1.9 0.95 0.95 0.8 0.15 0.3min. 1.1 (1) emitter (2) base (3) collecto r (1) emitter (2) base (3) collecto r 100ma / 50v digital transistors (with built-in resistors) dtc115tm / DTC115TE / dtc115tua / dtc115tka ? applications ? dimensions (unit : mm) inverter, interface, driver ? features 1) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) only the on / off conditions need to be set for operation, making t he device design easy. 4) higher mounting densit ies can be achieved. ? structure npn epitaxial planar silicon transistor (resistor built-in type) ? packaging specifications tl umt3 emt3 smt3 DTC115TE dtc115tm part no. dtc115tua 3000 t2l vmt3 8000 t106 3000 t146 3000 dtc115tka ? ? ? ? ? ? ? ? ? ? ? ? package packaging type taping taping taping taping code basic ordering unit (pieces) ? inner circuit c b e r 1 e : emitter c : collector b : base r 1 =100k
2/2 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.11 - rev.c data sheet dtc115tm / DTC115TE / dtc115tua / dtc115tka ? absolute maximum ratings (ta=25 ? c) parameter symbol pc tj tstg limits 50 50 5 100 200 150 dtc115tua / dtc115tka dtc115tm / DTC115TE 150 ? 55 to + 150 unit v v v ma mw ?c ?c collector p ower dissipation collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature v cbo v ceo v ebo i c ? electrical characteristics (ta=25 ? c) parameter symbol min. typ. max. unit conditions 50 50 5 ? ? ? 100 ? 70 ? ? ? ? ? ? 250 250 100 ? ? ? 0.5 0.5 0.3 600 ? 130 v v v a a v ? mhz k i c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v i c /i b = 1ma/0.1ma i c = 1ma, v ce = 5v v ce = 10v, i e = ? 5ma, f = 100mhz ? ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? characteristics of built-in transistor. bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 ? electrical characteristics curves 10 100 1000 0.1 1 10 h : n i a g t n e r r u c c d e f collector current : i c (ma) v ce =5v ta=100oc 25oc -40oc fig 1. dc current gain vs. collector current 0.01 0.1 1 0.01 0.1 1 10 : e g a t l o v n o i t a r u t a s r o t c e l l o c v ) t a s ( e c ) v ( output current : i o (ma) i c /i b =20/1 ta=100oc 25oc -40oc fig 2. collector voltage vs. collector saturation voltage.
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